| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N4152 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 32 |
1N4153 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
| 33 |
1N4153 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 34 |
1N4153 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 35 |
1N4154 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 36 |
1N4154 |
High speed switching diode |
IPRS Baneasa |
| 37 |
1N4154 |
Silicon High Speed Switching Diode |
IPRS Baneasa |
| 38 |
1N4154 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 39 |
1N4154 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 40 |
1N4305 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 41 |
1N4444 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 42 |
1N4446 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 43 |
1N4446 |
High speed switching diode |
IPRS Baneasa |
| 44 |
1N4446 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 45 |
1N4446 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 46 |
1N4447 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 47 |
1N4447 |
High speed switching diode |
IPRS Baneasa |
| 48 |
1N4447 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 49 |
1N4447 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 50 |
1N4448 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 51 |
1N4448 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 52 |
1N4448 |
High-speed switching diode |
Formosa MS |
| 53 |
1N4448 |
High speed switching diode |
IPRS Baneasa |
| 54 |
1N4448 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 55 |
1N4448 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 56 |
1N4449 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 57 |
1N4449 |
High speed switching diode |
IPRS Baneasa |
| 58 |
1N4449 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 59 |
1N4449 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 60 |
1N4454 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| | | |
