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Datasheets for EMITTE

Datasheets found :: 1565
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 23A005 0.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
32 23A008 0.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
33 23A017 1.7 W, 20 V, 2300 MHz common emitter transistor GHz Technology
34 23A025 2.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
35 2N1073 PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V Motorola
36 2N1073A PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V Motorola
37 2N1073B PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V Motorola
38 2N3375 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
39 2N3553 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
40 2N3632 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
41 2N3903 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
42 2N3904 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
43 2N3905 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
44 2N3906 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
45 2N4123 General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
46 2N4124 General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
47 2N4125 Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
48 2N4126 Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
49 2N4400 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
50 2N4401 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
51 2N4402 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
52 2N4403 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
53 2N4932 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
54 2N4933 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
55 2N5086 Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
56 2N5087 Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
57 2N5088 Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
58 2N5089 Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
59 2N5155 PNP Germanium power transistor, collector-emitter sustaining voltage capability Motorola
60 2N5210 Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. USHA India LTD


Datasheets found :: 1565
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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