| No. |
Part Name |
Description |
Manufacturer |
| 31 |
HS3MB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 32 |
IR21531 |
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6us Deadtime in a 8-pin DIP package and differenct phase |
International Rectifier |
| 33 |
IR21531D |
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6us Deadtime in a 8-pin DIP package and differenct phase |
International Rectifier |
| 34 |
IR21531PBF |
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6us Deadtime in a 8-pin DIP package and differenct phase |
International Rectifier |
| 35 |
MUR160A |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 36 |
MUR190A |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 37 |
RS1JLS |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 38 |
RS1KLS |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 39 |
RS1MLS |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 40 |
UF4001 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 41 |
UF4002 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 42 |
UF4003 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 43 |
UF4004 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 44 |
UF4005 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 45 |
UF4006 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 46 |
UF4007 |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 47 |
UG2JA |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 48 |
UGF1004GA |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 49 |
UGF1005GA |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 50 |
UGF1006GA |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 51 |
UGF1007GA |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 52 |
UGF1008GA |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 53 |
US1A |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 54 |
US1B |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 55 |
US1D |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 56 |
US1G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 57 |
US1J |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 58 |
US1K |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 59 |
US1M |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
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