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Datasheets for ER FI

Datasheets found :: 1033
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 1N5312 CURRENT LIMITER FIELD EFFECT DIODES Knox Semiconductor Inc
32 1N5313 CURRENT LIMITER FIELD EFFECT DIODES Knox Semiconductor Inc
33 1N5314 CURRENT LIMITER FIELD EFFECT DIODES Knox Semiconductor Inc
34 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
35 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
36 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
37 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
38 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
39 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
40 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
41 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
42 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
43 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
44 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
45 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
46 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
47 430P Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
48 430P103X5600 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
49 430P103X9600 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
50 430P104X5100 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
51 430P104X5200 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
52 430P104X5400 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
53 430P104X5600 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
54 430P104X9100 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
55 430P104X9200 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
56 430P104X9400 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
57 430P104X9600 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
58 430P105X5050 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
59 430P105X5100 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
60 430P105X5200 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay


Datasheets found :: 1033
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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