No. |
Part Name |
Description |
Manufacturer |
31 |
10A060 |
6 W, 20 V, 1000 MHz common emitter transistor |
GHz Technology |
32 |
1150MP |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
33 |
11N60S5 |
Cool MOS�� Power Transistor |
Infineon |
34 |
128-Z |
MOS Field Effect Power Transistors |
Unknow |
35 |
13003BR |
POWER TRANSISTORS(1.5A,300-400V,40W) |
MOSPEC Semiconductor |
36 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
37 |
1314AB60 |
60 W, 25 V, 1350-1400 MHz common emitter transistor |
GHz Technology |
38 |
132-Z |
MOS Field Effect Power Transistors |
Unknow |
39 |
133-Z |
MOS Field Effect Power Transistors |
Unknow |
40 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
41 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
42 |
1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
43 |
1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
44 |
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor |
GHz Technology |
45 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
46 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
47 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
48 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
49 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
50 |
181T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
51 |
182T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
52 |
183T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
53 |
184T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
54 |
185T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
55 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
56 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
57 |
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
58 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
59 |
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
60 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
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