| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N4730C |
1W zener diode. Nominal zener voltage 3.9V. 2% tolerance. |
Jinan Gude Electronic Device |
| 32 |
1N4730D |
1W zener diode. Nominal zener voltage 3.9V. 1% tolerance. |
Jinan Gude Electronic Device |
| 33 |
1N5225AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.0 V. Tolerance +-10%. |
Microsemi |
| 34 |
1N5225BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.0 V. Tolerance +-5%. |
Microsemi |
| 35 |
1N5225UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.0 V. |
Microsemi |
| 36 |
1N5226 |
500 mW silicon zener diode. Nominal zener voltage 3.3 V. |
Fairchild Semiconductor |
| 37 |
1N5226AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. Tolerance +-10%. |
Microsemi |
| 38 |
1N5226B |
500 milliwatts glass silicon zener diode, zener voltage 3.3V |
Motorola |
| 39 |
1N5226BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. Tolerance +-5%. |
Microsemi |
| 40 |
1N5226UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. |
Microsemi |
| 41 |
1N5227 |
500 mW silicon zener diode. Nominal zener voltage 3.6 V. |
Fairchild Semiconductor |
| 42 |
1N5227AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. Tolerance +-10%. |
Microsemi |
| 43 |
1N5227B |
500 milliwatts glass silicon zener diode, zener voltage 3.6V |
Motorola |
| 44 |
1N5227BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. Tolerance +-5%. |
Microsemi |
| 45 |
1N5227UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. |
Microsemi |
| 46 |
1N5228 |
500 mW silicon zener diode. Nominal zener voltage 3.9 V. |
Fairchild Semiconductor |
| 47 |
1N5228AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.9 V. Tolerance +-10%. |
Microsemi |
| 48 |
1N5228B |
500 milliwatts glass silicon zener diode, zener voltage 3.9V |
Motorola |
| 49 |
1N5228BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.9 V. Tolerance +-5%. |
Microsemi |
| 50 |
1N5228UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.9 V. |
Microsemi |
| 51 |
1N5518A |
0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 52 |
1N5518B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 53 |
1N5518D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 54 |
1N5519A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 55 |
1N5519B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 56 |
1N5520A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 57 |
1N5520B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 58 |
1N5913 |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 59 |
1N5913A |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 60 |
1N5913C |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
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