No. |
Part Name |
Description |
Manufacturer |
31 |
IRF6603 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
32 |
IRF6604 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
33 |
IRF6607 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
34 |
IRF6608 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
35 |
IRF6609 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
36 |
IRF6609TR1 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
37 |
IRF6612 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
38 |
IRF6617 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
39 |
IRF6617TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes. |
International Rectifier |
40 |
IRF6618 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
41 |
IRF6618TR1 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
42 |
IRF6620 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
43 |
IRF6620TR1 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
44 |
IRF6621 |
The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance |
International Rectifier |
45 |
IRF6623 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
46 |
IRF6623TR1 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
47 |
IRF6691 |
20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET package |
International Rectifier |
48 |
MAX881 |
Low-Noise Bias Supply in MAX with Power-OK for GaAsFET PA |
MAXIM - Dallas Semiconductor |
49 |
MAX881R |
Low-Noise Bias Supply in µMAX with Power OK for GaAsFET PA |
MAXIM - Dallas Semiconductor |
50 |
MAX881REUB |
Low-Noise Bias Supply in MAX with Power-OK for GaAsFET PA |
MAXIM - Dallas Semiconductor |
51 |
MAX881REUB+ |
Low-Noise Bias Supply in µMAX with Power OK for GaAsFET PA |
MAXIM - Dallas Semiconductor |
52 |
MAX881REUB+T |
Low-Noise Bias Supply in µMAX with Power OK for GaAsFET PA |
MAXIM - Dallas Semiconductor |
53 |
MAX881REUB-T |
Low-Noise Bias Supply in µMAX with Power OK for GaAsFET PA |
MAXIM - Dallas Semiconductor |
54 |
NSS20601CF8 |
Low VCE(sat) Transistor, NPN, 20 V, 8.0 A, ChipFET Package |
ON Semiconductor |
55 |
PB-IRF6100 |
Leaded -20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
56 |
PB-IRF6617 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes. |
International Rectifier |
57 |
SI1555DL |
Complementary Low Threshold MOSFET Pair |
Vishay |
58 |
T8110-BAL-DB |
PCI_based H.100/H110 switch and packet payload engine. |
Agere Systems |
59 |
U440 |
Matched N-Channel JFET Pairs |
TEMIC |
60 |
U441 |
Matched N-Channel JFET Pairs |
TEMIC |
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