No. |
Part Name |
Description |
Manufacturer |
31 |
100371QMQB |
Low power triple 4-input multiplexer with enable. Military grade device with environmental and burn-in processing. |
National Semiconductor |
32 |
10KE |
Embedded Programmable Logic Device |
Altera Corporation |
33 |
11016 |
Isolated Resistor Termination Network |
California Micro Devices Corp |
34 |
12BH7-A |
The 12BH7-A is a miniature medium-mu twin troide designed primarily for use as a vertical-deflection amplifier in television receivers |
General Semiconductor |
35 |
12F10 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
36 |
12F100 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
37 |
12F100R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
38 |
12F10R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
39 |
12F120 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
40 |
12F120R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
41 |
12F20 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
42 |
12F20R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
43 |
12F40 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
44 |
12F40R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
45 |
12F60 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
46 |
12F60R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
47 |
12F80 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
48 |
12F80R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
49 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
50 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
51 |
1503-100A |
Max delay 100 ns, Mechanically variable delay line |
Data Delay Devices Inc |
52 |
1503-100B |
Max delay 100 ns, Mechanically variable delay line |
Data Delay Devices Inc |
53 |
1503-100C |
Max delay 100 ns, Mechanically variable delay line |
Data Delay Devices Inc |
54 |
1503-120B |
Max delay 120 ns, Mechanically variable delay line |
Data Delay Devices Inc |
55 |
1503-140B |
Max delay 140 ns, Mechanically variable delay line |
Data Delay Devices Inc |
56 |
1503-15A |
Max delay 15 ns, Mechanically variable delay line |
Data Delay Devices Inc |
57 |
1503-15B |
Max delay 15 ns, Mechanically variable delay line |
Data Delay Devices Inc |
58 |
1503-160B |
Max delay 160 ns, Mechanically variable delay line |
Data Delay Devices Inc |
59 |
1503-200B |
Max delay 200 ns, Mechanically variable delay line |
Data Delay Devices Inc |
60 |
1503-20D |
Max delay 20 ns, Mechanically variable delay line |
Data Delay Devices Inc |
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