| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BSW73 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 32 |
BSW74 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 33 |
BSW75 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 34 |
BSW82 |
NPN silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 35 |
BSW83 |
NPN silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 36 |
BSW84 |
NPN silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 37 |
BSW85 |
NPN silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 38 |
CC1190 |
850 - 950MHz RF Front End |
Texas Instruments |
| 39 |
CC1190RGVR |
850 - 950MHz RF Front End 16-VQFN -40 to 85 |
Texas Instruments |
| 40 |
CC1190RGVT |
850 - 950MHz RF Front End 16-VQFN -40 to 85 |
Texas Instruments |
| 41 |
CC2590 |
2.4-GHZ RF Front End |
Texas Instruments |
| 42 |
CC2591 |
2.4 GHz RF Front End |
Texas Instruments |
| 43 |
CC2595 |
RF Front-End Transmit Power Amplifier for 2.4GHz ISM Band Systems 16-QFN -40 to 85 |
Texas Instruments |
| 44 |
CC2595RGTR |
RF Front-End Transmit Power Amplifier for 2.4GHz ISM Band Systems 16-QFN -40 to 85 |
Texas Instruments |
| 45 |
CC2595RGTT |
RF Front-End Transmit Power Amplifier for 2.4GHz ISM Band Systems 16-QFN -40 to 85 |
Texas Instruments |
| 46 |
CXD1250M |
Example of Combination of Frame Readout System CCD Image Sensor and System IC |
SONY |
| 47 |
CXD1254AR |
Example of Combination of Frame Readout System CCD Image Sensor and System IC |
SONY |
| 48 |
CXY10 |
Gallium arsenide diode with a high cut-off frequency for use in parametric amplifers, frequency multipliers and switches |
Mullard |
| 49 |
CXY12 |
Gallium arsenide diode with a high cut-off frequency for use in frequency multipliers up to Q-Band |
Mullard |
| 50 |
EB104 |
Application Note - GET 600 Watts RF from four power FETs, MRF150 |
Motorola |
| 51 |
FPJ111 |
JK master-slave flip-flop with changeable cut-off frequency |
AEG-TELEFUNKEN |
| 52 |
FPJ111 |
JK master-slave flip-flop with changeable cut-off frequency |
AEG-TELEFUNKEN |
| 53 |
FPJ113 |
JK master-slave flip-flop with changeable cut-off frequency |
AEG-TELEFUNKEN |
| 54 |
FPJ113 |
JK master-slave flip-flop with changeable cut-off frequency |
AEG-TELEFUNKEN |
| 55 |
GP1020 |
0.3-7.0V; GPS receiver RF front end. For C/A code global positioning by satellite receivers |
Mitel Semiconductor |
| 56 |
GP2010 |
GPS Receiver RF Front End |
Mitel Semiconductor |
| 57 |
GP2010 |
GPS Receiver RF Front End |
Zarlink Semiconductor |
| 58 |
GP2015 |
GPS Receiver RF Front End |
Mitel Semiconductor |
| 59 |
GP2015 |
Miniature GPS Receiver RF Front End |
Zarlink Semiconductor |
| 60 |
GP2015IGFP1R |
6-5V; GPS receiver RF front end. For C/A code global positioning by satellite receivers, time standards, navigation, surveying |
Mitel Semiconductor |
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