| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CDP-RX-02N |
UHF Narrow Band Multi Channel Transmitter/Receiver |
etc |
| 32 |
CDP-TX-02N |
UHF Narrow Band Multi Channel Transmitter/Receiver |
etc |
| 33 |
CDP-TX02 |
UHF Narrow Band Multi Channel Transmitter/Receiver |
etc |
| 34 |
CMBT5179 |
0.225W RF NPN Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. |
Continental Device India Limited |
| 35 |
CSC1047 |
0.400W RF NPN Transistor. 20V Vceo, 0.015A Ic, 40 - 260 hFE. |
Continental Device India Limited |
| 36 |
CSC1047B |
0.400W RF NPN Transistor. 20V Vceo, 0.015A Ic, 40 - 110 hFE. |
Continental Device India Limited |
| 37 |
CSC1047C |
0.400W RF NPN Transistor. 20V Vceo, 0.015A Ic, 65 - 160 hFE. |
Continental Device India Limited |
| 38 |
CSC1047D |
0.400W RF NPN Transistor. 20V Vceo, 0.015A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 39 |
CSC3930 |
0.150W RF NPN Transistor. 20V Vceo, 30.000A Ic, 70 - 220 hFE. Complementary CSA1532 |
Continental Device India Limited |
| 40 |
CSC3930B |
0.150W RF NPN Transistor. 20V Vceo, 30.000A Ic, 70 - 140 hFE. Complementary CSA1532B |
Continental Device India Limited |
| 41 |
CSC3930C |
0.150W RF NPN Transistor. 20V Vceo, 30.000A Ic, 110 - 220 hFE. Complementary CSA1532C |
Continental Device India Limited |
| 42 |
CSC3936 |
0.150W RF NPN Transistor. 20V Vceo, 0.030A Ic, 70 - 250 hFE. |
Continental Device India Limited |
| 43 |
CSC3936B |
0.150W RF NPN Transistor. 20V Vceo, 0.030A Ic, 70 - 160 hFE. |
Continental Device India Limited |
| 44 |
CSC3936C |
0.150W RF NPN Transistor. 20V Vceo, 0.030A Ic, 110 - 250 hFE. |
Continental Device India Limited |
| 45 |
CTCSS |
Generation of Non-Standard CTCSS Tones |
CONSUMER MICROCIRCUITS LIMITED |
| 46 |
DMBT2369 |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
DC Components |
| 47 |
E702360_SH7058 |
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. |
Renesas |
| 48 |
H.261 |
LINE TRANSMISSION OF NON-TELEPHONE SIGNALS |
etc |
| 49 |
HA17431 |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 50 |
HA17431VLTP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 51 |
HA17431VUP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 52 |
HA17432VLTP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 53 |
HA17432VUP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 54 |
HN2C13FT |
RF New Products |
TOSHIBA |
| 55 |
HN2C14FT |
RF New Products |
TOSHIBA |
| 56 |
HN3C16FT |
RF New Products |
TOSHIBA |
| 57 |
HN3C18FT |
RF New Products |
TOSHIBA |
| 58 |
HSMS-2810 |
HSMS-2810 · Low 1/f noise general purpose Schottky diode |
Agilent (Hewlett-Packard) |
| 59 |
HSMS-2812 |
HSMS-2812 · low 1/f noise general purpose Schottky diode |
Agilent (Hewlett-Packard) |
| 60 |
HSMS-2813 |
HSMS-2813 · low 1/f noise general purpose Schottky diode |
Agilent (Hewlett-Packard) |
| | | |
