DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for F P

Datasheets found :: 7978
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 2N1561 PNP germanium mesa transistor for VHF power amplifier applications Motorola
32 2N1562 PNP germanium mesa transistor for VHF power amplifier applications Motorola
33 2N1692 PNP germanium mesa transistor for VHF power amplifier applications Motorola
34 2N1693 PNP germanium mesa transistor for VHF power amplifier applications Motorola
35 2N2631 NPN triple-diffused planar silicon RF Power Transistor RCA Solid State
36 2N2857 Double-diffused epitaxial planar silicon RF power transistor RCA Solid State
37 2N2876 NPN triple-diffused planar silicon RF Power Transistor RCA Solid State
38 2N3055 Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications ITT Semiconductors
39 2N3055 Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications ITT Semiconductors
40 2N3137 Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier SGS-ATES
41 2N3229 NPN RF power transistor RCA Solid State
42 2N3375 Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages AEG-TELEFUNKEN
43 2N3375 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
44 2N3375 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
45 2N3553 Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages AEG-TELEFUNKEN
46 2N3553 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
47 2N3553 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
48 2N3632 Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages AEG-TELEFUNKEN
49 2N3632 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
50 2N3632 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
51 2N3635 1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
52 2N3636 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
53 2N3637 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
54 2N3733 10W, 400-Mc Silicon NPN Overlay RF Power Transistor RCA Solid State
55 2N3866 Silicon NPN epitaxial planar transistor for VHF and UHF power stages, oscillator stages and driver stages AEG-TELEFUNKEN
56 2N3866 Silicon NPN Overlay RF Power Transistor RCA Solid State
57 2N3924 NPN silicon RF power transistor Motorola
58 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
59 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
60 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola


Datasheets found :: 7978
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



© 2024 - www Datasheet Catalog com