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Datasheets for F P

Datasheets found :: 7581
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No. Part Name Description Manufacturer
31 2N1692 PNP germanium mesa transistor for VHF power amplifier applications Motorola
32 2N1693 PNP germanium mesa transistor for VHF power amplifier applications Motorola
33 2N2631 NPN triple-diffused planar silicon RF Power Transistor RCA Solid State
34 2N2857 Double-diffused epitaxial planar silicon RF power transistor RCA Solid State
35 2N2876 NPN triple-diffused planar silicon RF Power Transistor RCA Solid State
36 2N3055 Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications ITT Semiconductors
37 2N3055 Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications ITT Semiconductors
38 2N3137 Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier SGS-ATES
39 2N3229 NPN RF power transistor RCA Solid State
40 2N3375 Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages AEG-TELEFUNKEN
41 2N3375 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
42 2N3375 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
43 2N3553 Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages AEG-TELEFUNKEN
44 2N3553 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
45 2N3553 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
46 2N3632 Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages AEG-TELEFUNKEN
47 2N3632 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
48 2N3632 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
49 2N3635 1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
50 2N3636 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
51 2N3637 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
52 2N3733 10W, 400-Mc Silicon NPN Overlay RF Power Transistor RCA Solid State
53 2N3866 Silicon NPN epitaxial planar transistor for VHF and UHF power stages, oscillator stages and driver stages AEG-TELEFUNKEN
54 2N3866 Silicon NPN Overlay RF Power Transistor RCA Solid State
55 2N3924 NPN silicon RF power transistor Motorola
56 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
57 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
58 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
59 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
60 2N3948 NPN silicon RF power transistor, ideal for CATV applications or military and industrial equipment Motorola


Datasheets found :: 7581
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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