No. |
Part Name |
Description |
Manufacturer |
31 |
3SK309 |
GaAs N Channel Dual Gate MES FET UHF RF Amplifier |
Hitachi Semiconductor |
32 |
3SK317 |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
Hitachi Semiconductor |
33 |
3SK318 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
Hitachi Semiconductor |
34 |
3SK319 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
Hitachi Semiconductor |
35 |
AN-790 |
Thermal rating of RF power transistors |
Motorola |
36 |
AN1232 |
RUGGEDNESS IMPROVEMENT OF RF DMOS DEVICES |
SGS Thomson Microelectronics |
37 |
AN569 |
PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS |
SGS Thomson Microelectronics |
38 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
39 |
BAR63-02W |
PIN Diodes - PIN diode for high-speed switching of RF signals |
Infineon |
40 |
BAR63-02W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) |
Siemens |
41 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
42 |
BAR63-03W |
PIN Diodes - PIN diode for high-speed switching of RF signals |
Infineon |
43 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
44 |
BAR63-04 |
PIN Diodes - PIN diode for high-speed switching of RF signals |
Infineon |
45 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
46 |
BAR63-04W |
PIN Diodes - PIN diode for high-speed switching of RF signals |
Infineon |
47 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
48 |
BAR63-05 |
PIN Diodes - PIN diode for high-speed switching of RF signals |
Infineon |
49 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
50 |
BAR63-05W |
PIN Diodes - PIN diode for high-speed switching of RF signals |
Infineon |
51 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
52 |
BAR63-06 |
PIN Diodes - PIN diode for high-speed switching of RF signals |
Infineon |
53 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
54 |
BAR63-06W |
PIN Diodes - PIN diode for high-speed switching of RF signals |
Infineon |
55 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
56 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
57 |
BB101C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
58 |
BB101C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
59 |
BB101M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
60 |
BB101M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
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