No. |
Part Name |
Description |
Manufacturer |
31 |
ERJU14F1002U |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
32 |
ERJU1DF1002U |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
33 |
ERJU1TF1002U |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
34 |
ERJUP6F1002V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
35 |
ERJUP8F1002V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
36 |
ERJXGNF1002U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
37 |
ERJXGNF1002Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
38 |
F1002 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
39 |
F100250 |
-4.2 V to -5.7 V, quint full duplex line transceiver |
National Semiconductor |
40 |
FRAF1002G |
Rectifier: Fast |
Taiwan Semiconductor |
41 |
FRF1002G |
Rectifier: Fast |
Taiwan Semiconductor |
42 |
GPF1002 |
Rectifier: Standard |
Taiwan Semiconductor |
43 |
HAF1002 |
Silicon P Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
44 |
HAF1002(L) |
Power termal MOSFET |
Hitachi Semiconductor |
45 |
HAF1002(L)/(S) |
Thermal MOS FETs |
Hitachi Semiconductor |
46 |
HAF1002(S) |
Power termal MOSFET |
Hitachi Semiconductor |
47 |
HAF1002L |
Silicon P Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
48 |
HAF1002L |
Transistors>Switching/MOSFETs |
Renesas |
49 |
HAF1002S |
Silicon P Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
50 |
HAF1002S |
Transistors>Switching/MOSFETs |
Renesas |
51 |
HERAF1002G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
52 |
HERF1002G |
Rectifier: High Efficient |
Taiwan Semiconductor |
53 |
MRF1002 |
MICROWAVE POWER TRANSISTORS |
Motorola |
54 |
MRF1002MA |
MICROWAVE POWER TRANSISTORS |
Motorola |
55 |
MRF1002MB |
MICROWAVE POWER TRANSISTORS |
Motorola |
56 |
MRF1002MC |
Microwave Pulse Power NPN silicon Transistor, 2W peak 960-1215MHz |
Motorola |
57 |
PTF10020 |
125 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
58 |
PTF10021 |
30 Watts, 1.4�1.6 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
59 |
SF1002G |
Rectifier: Superfast |
Taiwan Semiconductor |
60 |
SFAF1002G |
Rectifier: Superfast |
Taiwan Semiconductor |
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