No. |
Part Name |
Description |
Manufacturer |
31 |
ERJU06F1801V |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
32 |
ERJU08F1801V |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
33 |
ERJU12F1801U |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
34 |
ERJU14F1801U |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
35 |
ERJU1DF1801U |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
36 |
ERJU1TF1801U |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
37 |
ERJUP6F1801V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
38 |
ERJUP8F1801V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
39 |
ERJXGNF1801U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
40 |
ERJXGNF1801Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
41 |
IF1801 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
42 |
MGF1801 |
TAPE CARRIER MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
43 |
MGF1801B |
MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
44 |
MGF1801BT |
TAPE CARRIER MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
45 |
MGF1801BT |
TAPE CARRIER MICROWAVE POWER GaAs FET |
Mitsubishi Electric Corporation |
46 |
PTF180101 |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
47 |
PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
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