| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IRF350 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 32 |
IRF350-353 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 33 |
IRFK2F350 |
400V HALF BRDG HEXFET Power MOSFET in a TO-240AA package |
International Rectifier |
| 34 |
IRFK3F350 |
Isolated Base Power HEX-pak Assembly - Half Bridge Configuration |
International Rectifier |
| 35 |
MC54F350J |
4-BIT SHIFTER(With 3-State Outputs) |
Motorola |
| 36 |
MC74F350D |
4-BIT SHIFTER(With 3-State Outputs) |
Motorola |
| 37 |
MC74F350N |
4-BIT SHIFTER(With 3-State Outputs) |
Motorola |
| 38 |
N74F350D |
4-bit shifter |
Philips |
| 39 |
N74F350N |
4-bit shifter |
Philips |
| 40 |
NX8562LF350-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1535.03 nm. Frequency 195.30 THz. Anode floating. FC-PC connector. |
NEC |
| 41 |
NX8563LF350-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1535.03 nm. Frequency 195.30 THz. FC-PC connector. Anode floating. |
NEC |
| 42 |
PF3500 |
35A 1/2 PRESS-FIT DIODE |
Won-Top Electronics |
| 43 |
PF3501 |
35A 1/2 PRESS-FIT DIODE |
Won-Top Electronics |
| 44 |
PF3502 |
35A 1/2 PRESS-FIT DIODE |
Won-Top Electronics |
| 45 |
PF3504 |
35A 1/2 PRESS-FIT DIODE |
Won-Top Electronics |
| 46 |
PF3506 |
35A 1/2 PRESS-FIT DIODE |
Won-Top Electronics |
| 47 |
PF3508 |
35A 1/2 PRESS-FIT DIODE |
Won-Top Electronics |
| 48 |
Q62702-F350 |
NPN SILICON RF TRANSISTOR |
Siemens |
| 49 |
RHF350 |
Rad-hard 550MHz low noise Opamp |
ST Microelectronics |
| 50 |
RHF350K-01V |
Rad-hard 550MHz low noise Opamp |
ST Microelectronics |
| 51 |
RHF350K1 |
Rad-hard 550MHz low noise Opamp |
ST Microelectronics |
| 52 |
SN74F350 |
4-Bit Shifter With 3-State Outputs 16-PDIP 0 to 70 |
Texas Instruments |
| 53 |
SN74F350N |
4-Bit Shifter With 3-State Outputs 16-PDIP 0 to 70 |
Texas Instruments |
| 54 |
UF350 |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| | | |
