No. |
Part Name |
Description |
Manufacturer |
31 |
K4F661612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
32 |
K4F661612B-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
33 |
K4F661612B-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
34 |
K4F661612C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
35 |
K4F661612C-L |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
36 |
K4F661612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
37 |
K4F661612C-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
38 |
K4F661612C-TC50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
39 |
K4F661612C-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
40 |
K4F661612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
41 |
K4F661612C-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
42 |
K4F661612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
43 |
K4F661612D, K4F641612D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
44 |
K4F661612D, K4F641612D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
45 |
K4F661612E, K4F641612E |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
46 |
K4F661612E, K4F641612E |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
47 |
PB-IRF6610 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 66 amperes. |
International Rectifier |
48 |
PB-IRF6611 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes. |
International Rectifier |
49 |
PB-IRF6612 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 136 amperes. |
International Rectifier |
50 |
PB-IRF6613 |
Leaded A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
51 |
PB-IRF6614 |
Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes. |
International Rectifier |
52 |
PB-IRF6616 |
Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
53 |
PB-IRF6617 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes. |
International Rectifier |
54 |
PB-IRF6618 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
55 |
PB-IRF6619 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes. |
International Rectifier |
56 |
STR-F6612 |
SMPS primary IC, 400V, 60W |
Sanken |
57 |
STR-F6614 |
SMPS primary IC, 400V, 125W |
Sanken |
58 |
STR-F6616 |
SMPS primary IC, 400V, 190W |
Sanken |
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