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Datasheets for F661

Datasheets found :: 58
Page: | 1 | 2 |
No. Part Name Description Manufacturer
31 K4F661612B-TL45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power Samsung Electronic
32 K4F661612B-TL50 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power Samsung Electronic
33 K4F661612B-TL60 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power Samsung Electronic
34 K4F661612C 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
35 K4F661612C-L 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
36 K4F661612C-TC 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
37 K4F661612C-TC45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns Samsung Electronic
38 K4F661612C-TC50 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns Samsung Electronic
39 K4F661612C-TC60 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns Samsung Electronic
40 K4F661612C-TL45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power Samsung Electronic
41 K4F661612C-TL50 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power Samsung Electronic
42 K4F661612C-TL60 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power Samsung Electronic
43 K4F661612D, K4F641612D 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic
44 K4F661612D, K4F641612D 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic
45 K4F661612E, K4F641612E 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic
46 K4F661612E, K4F641612E 4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic
47 PB-IRF6610 Leaded A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 66 amperes. International Rectifier
48 PB-IRF6611 Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes. International Rectifier
49 PB-IRF6612 Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 136 amperes. International Rectifier
50 PB-IRF6613 Leaded A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. International Rectifier
51 PB-IRF6614 Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes. International Rectifier
52 PB-IRF6616 Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. International Rectifier
53 PB-IRF6617 Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes. International Rectifier
54 PB-IRF6618 Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. International Rectifier
55 PB-IRF6619 Leaded A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes. International Rectifier
56 STR-F6612 SMPS primary IC, 400V, 60W Sanken
57 STR-F6614 SMPS primary IC, 400V, 125W Sanken
58 STR-F6616 SMPS primary IC, 400V, 190W Sanken


Datasheets found :: 58
Page: | 1 | 2 |



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