| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 32 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 33 |
IRF823 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 34 |
IRF823 |
N-channel MOSFET, 450V, 2.2A |
SGS Thomson Microelectronics |
| 35 |
IRF823 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.0A |
Siliconix |
| 36 |
IRF823FI |
N-channel MOSFET, 450V, 1.5A |
SGS Thomson Microelectronics |
| 37 |
IRHF8230 |
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package |
International Rectifier |
| 38 |
MB90F823PF |
16-bit Proprietary Microcontroller |
Fujitsu Microelectronics |
| 39 |
MB90F823PFM |
16-bit Proprietary Microcontroller |
Fujitsu Microelectronics |
| 40 |
MB90F823PFV |
16-bit Proprietary Microcontroller |
Fujitsu Microelectronics |
| 41 |
MTMF8231 |
Silicon N-channel MOSFET |
Panasonic |
| 42 |
MTMF8233 |
Silicon N-channel MOS FET |
Panasonic |
| 43 |
N74F823D |
Bus interface registers |
Philips |
| 44 |
N74F823N |
Bus interface registers |
Philips |
| 45 |
S3C8235XZ0-QTR5, S3C8235XZ0-QTR8 |
S3C8238/C8235/F8235 User's manual |
Samsung Electronic |
| 46 |
S3C8238 |
S3C8238/C8235/F8235 User's manual |
Samsung Electronic |
| 47 |
S3F8235 |
S3C8238/C8235/F8235 User's manual |
Samsung Electronic |
| 48 |
S3F8235 |
S3C8238/C8235/F8235 User's manual |
Samsung Electronic |
| 49 |
YTF823 |
Field Effect Transistor - Silicon N Channel MOS type (π-MOS) |
TOSHIBA |
| | | |
