No. |
Part Name |
Description |
Manufacturer |
31 |
ISL21009BFB850 |
High Voltage Input Precision, Low Noise FGA� Voltage References |
Intersil |
32 |
ISL21009CFB812 |
High Voltage Input Precision, Low Noise FGA� Voltage References |
Intersil |
33 |
ISL21009CFB825 |
High Voltage Input Precision, Low Noise FGA� Voltage References |
Intersil |
34 |
ISL21009CFB841 |
High Voltage Input Precision, Low Noise FGA� Voltage References |
Intersil |
35 |
ISL21009CFB850 |
High Voltage Input Precision, Low Noise FGA� Voltage References |
Intersil |
36 |
ISL21009DFB812 |
High Voltage Input Precision, Low Noise FGA� Voltage References |
Intersil |
37 |
ISL21009DFB825 |
High Voltage Input Precision, Low Noise FGA� Voltage References |
Intersil |
38 |
ISL21009DFB841 |
High Voltage Input Precision, Low Noise FGA� Voltage References |
Intersil |
39 |
ISL21009DFB850 |
High Voltage Input Precision, Low Noise FGA� Voltage References |
Intersil |
40 |
IXFB80N50Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
41 |
M58LR128FB85ZB6 |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
42 |
M58LR128FB85ZB6T |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
43 |
M58WR032FB80ZB6 |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
44 |
M58WR032FB80ZB6E |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
45 |
M58WR032FB80ZB6F |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
46 |
M58WR032FB80ZB6T |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
ST Microelectronics |
47 |
M5M29FB800FP |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
48 |
M5M29FB800RV-10 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
49 |
M5M29FB800RV-12 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
50 |
M5M29FB800RV-80 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
51 |
M5M29FB800VP |
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
52 |
M5M29FB800VP-10 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
53 |
M5M29FB800VP-12 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
54 |
M5M29FB800VP-80 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
55 |
MCM72FB8ML |
256K x 72 Bit Burst RAM Multichip Module |
Motorola |
56 |
MCM72FB8ML7.5 |
256K x 72 Bit Burst RAM Multichip Module |
Motorola |
57 |
MCM72FB8ML7.5R |
256K x 72 Bit Burst RAM Multichip Module |
Motorola |
58 |
MCM72FB8ML8 |
256K x 72 Bit Burst RAM Multichip Module |
Motorola |
59 |
MCM72FB8ML8R |
256K x 72 Bit Burst RAM Multichip Module |
Motorola |
60 |
MDFB85 |
Fast Recovery Diode |
Dynex Semiconductor |
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