| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AFE5818ZBV |
16-Channel Ultrasound Analog Front End with Passive CW Mixer, 0.75 nV/rtHz, 124mW/Channel 289-NFBGA -40 to 85 |
Texas Instruments |
| 32 |
AFE5851 |
16-channel VGA with ADC |
Texas Instruments |
| 33 |
AFE5851IRGCR |
16-channel VGA with ADC 64-VQFN -40 to 85 |
Texas Instruments |
| 34 |
AFE5851IRGCT |
16-channel VGA with ADC 64-VQFN -40 to 85 |
Texas Instruments |
| 35 |
AFE58JD16 |
16-Channel, Ultrasound, AFE with 90-mW/Channel Power, 0.95-nV/?Hz Nois 289-NFBGA -40 to 85 |
Texas Instruments |
| 36 |
AFE58JD16ZAV |
16-Channel, Ultrasound, AFE with 90-mW/Channel Power, 0.95-nV/?Hz Nois 289-NFBGA -40 to 85 |
Texas Instruments |
| 37 |
AFE58JD18 |
16-Channel, Ultrasound, Analog Front-End with 140-mW/Channel Power, 0.75-nV/?Hz. 289-NFBGA -40 to 85 |
Texas Instruments |
| 38 |
AFE58JD18ZBV |
16-Channel, Ultrasound, Analog Front-End with 140-mW/Channel Power, 0.75-nV/?Hz. 289-NFBGA -40 to 85 |
Texas Instruments |
| 39 |
BFE505 |
NPN wideband differential transistor |
Philips |
| 40 |
BFE520 |
NPN wideband differential transistor |
Philips |
| 41 |
FE5A |
GLASS PASSIVATED FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 42 |
FE5A |
Diode Switching 50V 5A 2-Pin Case G-4 |
New Jersey Semiconductor |
| 43 |
FE5A |
Ultra Fast Sinterglass Diode |
Vishay |
| 44 |
FE5B |
GLASS PASSIVATED FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 45 |
FE5B |
Diode Switching 100V 5A 2-Pin Case G-4 |
New Jersey Semiconductor |
| 46 |
FE5B |
Ultra Fast Sinterglass Diode |
Vishay |
| 47 |
FE5C |
GLASS PASSIVATED FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 48 |
FE5C |
Diode Switching 150V 5A 2-Pin Case G-4 |
New Jersey Semiconductor |
| 49 |
FE5C |
Ultra Fast Sinterglass Diode |
Vishay |
| 50 |
FE5D |
GLASS PASSIVATED FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 51 |
FE5D |
Diode Switching 200V 5A 2-Pin Case G-4 |
New Jersey Semiconductor |
| 52 |
FE5D |
Ultra Fast Sinterglass Diode |
Vishay |
| 53 |
HDSP-H511-FE500 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 54 |
HDSP-H513-FE500 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 55 |
HDSP-K511-FE500 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 56 |
HDSP-K513-FE500 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 57 |
IRFK2FE50 |
800V HALF BRDG HEXFET Power MOSFET in a TO-240AA package |
International Rectifier |
| 58 |
IXFE50N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 59 |
IXFE55N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 60 |
MFE5000 |
Silicon P-Channel Enhancement MOS Field Effect Quad Transistor |
Motorola |
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