| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N3906 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 32 |
2N3930 |
High voltage amplifier transistor |
SGS-ATES |
| 33 |
2N3931 |
High voltage amplifier transistor |
SGS-ATES |
| 34 |
2N3962 |
Low level amplifier transistor |
SGS-ATES |
| 35 |
2N3963 |
Low level amplifier transistor |
SGS-ATES |
| 36 |
2N3964 |
Low level amplifier transistor |
SGS-ATES |
| 37 |
2N3965 |
Low level amplifier transistor |
SGS-ATES |
| 38 |
2N4123 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 39 |
2N4124 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 40 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 41 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 42 |
2N4126 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 43 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 44 |
2N4248 |
PNP Silicon Low-Level, Low-Noise amplifier transistor |
ITT Semiconductors |
| 45 |
2N4249 |
PNP Silicon Low-Level, Low-Noise amplifier transistor |
ITT Semiconductors |
| 46 |
2N4250 |
PNP Silicon Low-Level, Low-Noise amplifier transistor |
ITT Semiconductors |
| 47 |
2N4358 |
High voltage amplifier transistor |
SGS-ATES |
| 48 |
2N4410 |
Amplifier Transistor(NPN Silicon) |
ON Semiconductor |
| 49 |
2N4410-D |
Amplifier Transistor NPN Silicon |
ON Semiconductor |
| 50 |
2N5086 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 51 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 52 |
2N5087 |
Low-Power General Purpose PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 53 |
2N5087 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 54 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 55 |
2N5087-D |
Amplifier Transistor PNP Silicon |
ON Semiconductor |
| 56 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 57 |
2N5088-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 58 |
2N5088RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 59 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 60 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
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