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Datasheets for FOR G

Datasheets found :: 1145
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No. Part Name Description Manufacturer
31 2N2026 V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications International Rectifier
32 2N2027 V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications International Rectifier
33 2N2028 V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications International Rectifier
34 2N2029 V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications International Rectifier
35 2N2030 V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications International Rectifier
36 2N2322 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
37 2N2323 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
38 2N2324 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
39 2N2325 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
40 2N2326 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
41 2N3055H NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. USHA India LTD
42 2N4398 High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices Motorola
43 2N4399 High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices Motorola
44 2N460 PNP germanium transistor for general purpose industrial applications Motorola
45 2N461 PNP germanium transistor for general purpose industrial applications Motorola
46 2N5208 PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz Motorola
47 2N5400 PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications Semtech
48 2N5401 PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications Semtech
49 2N5550 NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications Semtech
50 2N5551 NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications Semtech
51 2N6551 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
52 2N6552 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
53 2N6553 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
54 2N6554 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
55 2N6555 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
56 2N6556 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
57 2SA1668 Transistor For General Purpose Sanken
58 2SA1945 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Isahaya Electronics Corporation
59 2SA1945 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Isahaya Electronics Corporation
60 2SA495 Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 TOSHIBA


Datasheets found :: 1145
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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