No. |
Part Name |
Description |
Manufacturer |
31 |
2N2026 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
32 |
2N2027 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
33 |
2N2028 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
34 |
2N2029 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
35 |
2N2030 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
36 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
37 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
38 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
39 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
40 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
41 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
42 |
2N4398 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
43 |
2N4399 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
44 |
2N460 |
PNP germanium transistor for general purpose industrial applications |
Motorola |
45 |
2N461 |
PNP germanium transistor for general purpose industrial applications |
Motorola |
46 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
47 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
48 |
2N5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
49 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
50 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
51 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
52 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
53 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
54 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
55 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
56 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
57 |
2SA1668 |
Transistor For General Purpose |
Sanken |
58 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
59 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
60 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
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