| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N2907 |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 32 |
2N2907A |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 33 |
2N3053 |
NPN silicon annular transistor designed for medium-current applications |
Motorola |
| 34 |
2N3713 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 35 |
2N3714 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 36 |
2N3715 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 37 |
2N3716 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 38 |
2N3722 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 39 |
2N3723 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 40 |
2N3789 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 41 |
2N3790 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 42 |
2N3791 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 43 |
2N3792 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 44 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
| 45 |
2N718 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 46 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 47 |
2SA497 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
| 48 |
2SA498 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
| 49 |
2SD639 |
Silicon NPN epitaxial planer type(For medium-power general amplification) |
Panasonic |
| 50 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 51 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 52 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 53 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 54 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 55 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 56 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 57 |
AC105 |
Germanium PNP junction transistor for medium-power low-frequency amplifiers |
TELEFUNKEN |
| 58 |
AC106 |
Germanium PNP junction transistor for medium-power low-frequency amplifiers |
TELEFUNKEN |
| 59 |
AD1382KD |
18V; 900mW; 16-bit 500kHz sampling ADC. For medical imaging, CAT, magnetic resonance, vibration analysis, parametric measurement unit (ATE) |
Analog Devices |
| 60 |
AD1382TD |
18V; 900mW; 16-bit 500kHz sampling ADC. For medical imaging, CAT, magnetic resonance, vibration analysis, parametric measurement unit (ATE) |
Analog Devices |
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