| No. |
Part Name |
Description |
Manufacturer |
| 31 |
FSL23A0R4 |
6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 32 |
FSL23A4D |
5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 33 |
FSL23A4D1 |
5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 34 |
FSL23A4D3 |
5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 35 |
FSL23A4R |
5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 36 |
FSL23A4R1 |
5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 37 |
FSL23A4R3 |
5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 38 |
FSL23A4R4 |
5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 39 |
IRFSL23N15D |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 40 |
IRFSL23N15DPBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 41 |
IRFSL23N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 42 |
IRFSL23N20DPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 43 |
LL1608-FSL22NJ |
Multilayer Chip Inductors |
TOKO |
| 44 |
LL1608-FSL27NJ |
Multilayer Chip Inductors |
TOKO |
| 45 |
LL1608-FSL2N2S |
Multilayer Chip Inductors |
TOKO |
| 46 |
LL1608-FSL2N7S |
Multilayer Chip Inductors |
TOKO |
| 47 |
PB-IRFSL23N15D |
Leaded 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 48 |
PB-IRFSL23N20D |
Leaded 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| | | |
