No. |
Part Name |
Description |
Manufacturer |
31 |
TC554161FTL |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
32 |
TC554161FTL-10 |
262, 144-word by 16 bit static RAM, access time 100ns |
TOSHIBA |
33 |
TC554161FTL-10L |
262,144-WORD BY 16 BIT STATIC RAM |
TOSHIBA |
34 |
TC554161FTL-10V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
35 |
TC554161FTL-70 |
262, 144-word by 16 bit static RAM, access time 70ns |
TOSHIBA |
36 |
TC554161FTL-70L |
262,144-WORD BY 16 BIT STATIC RAM |
TOSHIBA |
37 |
TC554161FTL-70V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
38 |
TC554161FTL-85 |
262, 144-word by 16 bit static RAM, access time 85ns |
TOSHIBA |
39 |
TC554161FTL-85L |
262,144-WORD BY 16 BIT STATIC RAM |
TOSHIBA |
40 |
TC554161FTL-85V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
41 |
TC59S6404BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
42 |
TC59S6404BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
43 |
TC59S6404BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
44 |
TC59S6404BFTL-10 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
45 |
TC59S6404BFTL-80 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
46 |
TC59S6408BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
47 |
TC59S6408BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
48 |
TC59S6408BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
49 |
TC59S6408BFTL-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
50 |
TC59S6408BFTL-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
51 |
TC59S6416BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
52 |
TC59S6416BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
53 |
TC59S6416BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
54 |
TC59S6416BFTL-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
55 |
TC59S6416BFTL-80 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
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