No. |
Part Name |
Description |
Manufacturer |
31 |
PB-IRFZ34E |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
32 |
PB-IRFZ34N |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
33 |
PB-IRFZ34NL |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
34 |
PB-IRFZ34NS |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
35 |
PB-IRFZ34VL |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
36 |
PB-IRFZ34VS |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
37 |
PFZ300 |
V(br): 300V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
38 |
PFZ300A |
V(br): 300V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
39 |
PFZ320 |
V(br): 320V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
40 |
PFZ320A |
V(br): 320V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
41 |
PFZ350 |
V(br): 350V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
42 |
PFZ350A |
V(br): 350V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
43 |
SMFZ30V |
Zener Diode |
Korea Electronics (KEC) |
44 |
SMFZ33V |
Zener Diode |
Korea Electronics (KEC) |
45 |
SMFZ36V |
Zener Diode |
Korea Electronics (KEC) |
46 |
USFZ30V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
47 |
USFZ33V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
48 |
USFZ36V |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE |
Korea Electronics (KEC) |
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