No. |
Part Name |
Description |
Manufacturer |
31 |
1N4152 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
32 |
1N4153 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
33 |
1N4153 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
34 |
1N4153 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
35 |
1N4154 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-yellow or plain text |
Texas Instruments |
36 |
1N4154 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
37 |
1N4446 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
38 |
1N4446 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
39 |
1N4447 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
40 |
1N4447 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
41 |
1N4448 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
42 |
1N4448 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
43 |
1N4449 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
44 |
1N4449 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
45 |
1N914 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
46 |
1N914A |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
47 |
1N914B |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
48 |
1N916 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
49 |
1N916A |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
50 |
1N916B |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
51 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
52 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
53 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
54 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
55 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
56 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
57 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
58 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
59 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
60 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
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