| No. |
Part Name |
Description |
Manufacturer |
| 31 |
G8194-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 32 |
G8194-22 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 33 |
G8194-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 34 |
G8194-32 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 35 |
G8194-44 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 36 |
G8195 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 37 |
G8195-11 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 38 |
G8195-12 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 39 |
G8195-21 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 40 |
G8195-22 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 41 |
G8195-31 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 42 |
G8195-32 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 43 |
G8198 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 44 |
G8198-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 45 |
G8198-02 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 46 |
IRHG8110 |
100V Quad N-Channel MOSFET in a MO-036AB package |
International Rectifier |
| 47 |
IRHG8110(N) |
100V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
| 48 |
LNG816RDD |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
| 49 |
LNG816RFD |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
| 50 |
LNG819RDD |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
| 51 |
LNG81LCF8 |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
| 52 |
MTG813B |
LED LAMP ARRAYS |
Marktech Optoelectronics |
| 53 |
SPLBG81 |
Unmounted Laser Bar |
Infineon |
| 54 |
SPLCG81_0 |
Laser C-Mount 808 nm, 100 mym aperture |
Infineon |
| 55 |
TG81 |
Dual pulse shaper delay AND gate, military temperature range |
Transitron Electronic |
| 56 |
YG811S06R |
Schottky barrier diode |
Fuji Electric |
| 57 |
YG811S09 |
Schottky barrier diode |
Fuji Electric |
| 58 |
YG811S09R |
Schottky barrier diode |
Fuji Electric |
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