No. |
Part Name |
Description |
Manufacturer |
31 |
ERJA1AG821U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
32 |
ERJB1AG821U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
33 |
ERJB2AG821V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
34 |
G821 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
35 |
G8211-11 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
36 |
G8211-12 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
37 |
G8211-21 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
38 |
G8211-22 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
39 |
G8211-31 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
40 |
G8211-32 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
41 |
HY5PS1G821(L)M-C4 |
DDR2 SDRAM - 1Gb |
Hynix Semiconductor |
42 |
HY5PS1G821(L)M-C5 |
DDR2 SDRAM - 1Gb |
Hynix Semiconductor |
43 |
HY5PS1G821(L)M-E3 |
DDR2 SDRAM - 1Gb |
Hynix Semiconductor |
44 |
HY5PS1G821(L)M-E4 |
DDR2 SDRAM - 1Gb |
Hynix Semiconductor |
45 |
HY5PS1G821(L)M-Y5 |
DDR2 SDRAM - 1Gb |
Hynix Semiconductor |
46 |
HY5PS1G821(L)M-Y6 |
DDR2 SDRAM - 1Gb |
Hynix Semiconductor |
47 |
HY5PS1G821M |
DDR2 SDRAM - 1Gb |
Hynix Semiconductor |
48 |
IRHG8214 |
250V Quad N-Channel MOSFET in a MO-036AB package |
International Rectifier |
49 |
IRHG8214(N) |
250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
50 |
KMH250LG821M35X80LL |
THE KMH SERIES CAPACITORS ARE COMPUTER GRADE CAPACITORS DESIGNED FOR A VERY LING LIFETIME |
etc |
51 |
NS32CG821A |
MicroCMOS Programmable IM Dynamic RAM Controller/Driver |
National Semiconductor |
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