| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N4764 |
1W zener diode. Nominal zener voltage 100V. 10% tolerance. |
Jinan Gude Electronic Device |
| 32 |
1N4764A |
Zener diode, 500 mW, zener voltage 100V |
Motorola |
| 33 |
1N4764C |
1W zener diode. Nominal zener voltage 100V. 2% tolerance. |
Jinan Gude Electronic Device |
| 34 |
1N4764D |
1W zener diode. Nominal zener voltage 100V. 1% tolerance. |
Jinan Gude Electronic Device |
| 35 |
1N4948GP |
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V |
Vishay |
| 36 |
1N5240 |
500 mW silicon zener diode. Nominal zener voltage 10.0 V. |
Fairchild Semiconductor |
| 37 |
1N5240AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 10 V. Tolerance +-10%. |
Microsemi |
| 38 |
1N5240B |
500 milliwatts glass silicon zener diode, zener voltage 10V |
Motorola |
| 39 |
1N5240BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 10 V. Tolerance +-5%. |
Microsemi |
| 40 |
1N5240UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 10 V. |
Microsemi |
| 41 |
1N5271AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 100 V. Tolerance +-10%. |
Microsemi |
| 42 |
1N5271B |
500 milliwatts glass silicon zener diode, zener voltage 100V |
Motorola |
| 43 |
1N5271BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 100 V. Tolerance +-5%. |
Microsemi |
| 44 |
1N5271UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 100 V. |
Microsemi |
| 45 |
1N5392G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
Jinan Gude Electronic Device |
| 46 |
1N5392G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
Jinan Gude Electronic Device |
| 47 |
1N5399G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. |
Jinan Gude Electronic Device |
| 48 |
1N5399G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. |
Jinan Gude Electronic Device |
| 49 |
1N5530A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 50 |
1N5530B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 51 |
1N5622GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 1000V |
Vishay |
| 52 |
1N5623GP |
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 1000V |
Vishay |
| 53 |
1N5925 |
1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 54 |
1N5925A |
1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 55 |
1N5925C |
1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 56 |
1N5925D |
1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 57 |
1N5949 |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 58 |
1N5949A |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 59 |
1N5949C |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 60 |
1N5949D |
1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
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