No. |
Part Name |
Description |
Manufacturer |
31 |
IRHNM57110SCS |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.2 package Metal Lid |
International Rectifier |
32 |
IRHNM57214SE |
250V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.2 package Metal Lid |
International Rectifier |
33 |
IXTK21N100 |
High Voltage MegaMOSTMFETs |
IXYS Corporation |
34 |
IXTN21N100 |
High Voltage MegaMOSTMFETs |
IXYS Corporation |
35 |
K5A3240YBC-T755 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
36 |
K5A3240YBC-T855 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
37 |
K5A3240YT |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
38 |
K5A3240YTC-T755 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
39 |
K5A3240YTC-T855 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
40 |
K5A3340YBC-T755 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
41 |
K5A3340YBC-T855 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
42 |
K5A3340YT |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
43 |
K5A3340YTC-T755 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
44 |
K5A3340YTC-T855 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
45 |
K5A3X40YTC |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
Samsung Electronic |
46 |
K5C6481NT(B)M |
Multi-Chip Package MEMORY Data Sheet |
Samsung Electronic |
47 |
K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM |
Samsung Electronic |
48 |
K5T6432YT |
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM |
Samsung Electronic |
49 |
KAB01D100M |
Multi-Chip Package MEMORY |
Samsung Electronic |
50 |
KAB01D100M-TLGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
51 |
KAB01D100M-TNGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
52 |
KAB02D100M-TLGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
53 |
KAB02D100M-TNGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
54 |
KAB03D100M-TLGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
55 |
KAB03D100M-TNGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
56 |
KAB04D100M-TLGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
57 |
KAB04D100M-TNGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
58 |
LTC2942 |
Battery Gas Gauge with Temperature, Voltage Measurement |
Linear Technology |
59 |
LTC2942-1 |
1A Battery Gas Gauge with Internal Sense Resistor and Temperature/Voltage Measurement |
Linear Technology |
60 |
LTC2942CDCB#PBF |
Battery Gas Gauge with Temperature, Voltage Measurement |
Linear Technology |
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