| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2SB646A |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
Hitachi Semiconductor |
| 32 |
2SB717 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
Hitachi Semiconductor |
| 33 |
2SB718 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
Hitachi Semiconductor |
| 34 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 35 |
2SC1514 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
| 36 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
| 37 |
2SC1615 |
High Voltage Amp. Triple Diffused Planar NPN Silicon Transistors |
ROHM |
| 38 |
2SC2278 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
| 39 |
2SC3360 |
HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 40 |
2SC4036 |
High Voltage Amp. Triple Diffused Planar NPN Silicon Transistors |
ROHM |
| 41 |
2SC4686 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TYPE. TV DYNAMIC FOCUS APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 42 |
2SC4686A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TYPE. TV DYNAMIC FOCUS APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 43 |
2SC5460 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 44 |
2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 45 |
2SC685H |
Silicon NPN Triple Diffused LTP Transistor, intended for use in High Voltage Amplifier, High Voltage Switching |
Hitachi Semiconductor |
| 46 |
2SD1305 |
Si NPN epitaxial planar high voltage AF amplifier. |
Panasonic |
| 47 |
2SD666 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A |
Hitachi Semiconductor |
| 48 |
2SD666A |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A |
Hitachi Semiconductor |
| 49 |
2SD757 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
Hitachi Semiconductor |
| 50 |
2SD758 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
Hitachi Semiconductor |
| 51 |
2SK367 |
Field Effect Transistor Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications |
TOSHIBA |
| 52 |
2SK368 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency and High Voltage Amplifier Applications Constant Current Applications |
TOSHIBA |
| 53 |
2SK373 |
Field Effect Transistor Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications |
TOSHIBA |
| 54 |
AEP15012 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Without indicator contact. |
Matsushita Electric Works(Nais) |
| 55 |
AEP15024 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Without indicator contact. |
Matsushita Electric Works(Nais) |
| 56 |
AEP15112 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. |
Matsushita Electric Works(Nais) |
| 57 |
AEP15124 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. |
Matsushita Electric Works(Nais) |
| 58 |
AEP15312 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact. |
Matsushita Electric Works(Nais) |
| 59 |
AEP15324 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact. |
Matsushita Electric Works(Nais) |
| 60 |
AEP16012 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact. |
Matsushita Electric Works(Nais) |
| | | |
