No. |
Part Name |
Description |
Manufacturer |
31 |
APT50GT60BRG |
IGBT w/o anti-parallel diode |
Microsemi |
32 |
APT50GT60SRDQ2G |
IGBT w/ anti-parallel diode |
Microsemi |
33 |
APT50GT60SRG |
IGBT w/o anti-parallel diode |
Microsemi |
34 |
APT60GT60BR |
Thunderbolt IGBT 600V 116A |
Advanced Power Technology |
35 |
APT60GT60BRG |
IGBT w/o anti-parallel diode |
Microsemi |
36 |
APT60GT60JR |
Thunderbolt IGBT 600V 90A |
Advanced Power Technology |
37 |
APT60GT60JR |
IGBT w/o anti-parallel diode |
Microsemi |
38 |
APT60GT60JRD |
Thunderbolt IGBT & FRED 600V 90A |
Advanced Power Technology |
39 |
APT60GT60JRDQ3 |
IGBT w/ anti-parallel diode |
Microsemi |
40 |
APT60GT60SRG |
IGBT w/o anti-parallel diode |
Microsemi |
41 |
APT8GT60KR |
Thunderbolt IGBT 600V 17A |
Advanced Power Technology |
42 |
APTGT600A60G |
Phase Leg |
Microsemi |
43 |
APTGT600DA60G |
Boost Chopper |
Microsemi |
44 |
APTGT600DU60G |
Dual Common Source |
Microsemi |
45 |
APTGT600SK60G |
Buck Chopper |
Microsemi |
46 |
APTGT600U120D4 |
Single Switch - IGBT |
Advanced Power Technology |
47 |
APTGT600U120D4G |
Single Switch |
Microsemi |
48 |
APTGT600U170D4 |
Single Switch - IGBT |
Advanced Power Technology |
49 |
APTGT600U170D4G |
Single Switch |
Microsemi |
50 |
GT605 |
Rectifier: Standard |
Taiwan Semiconductor |
51 |
GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
52 |
GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
53 |
GT60J323 |
IGBT for soft switching applications |
TOSHIBA |
54 |
GT60J323H |
Discrete IGBT |
TOSHIBA |
55 |
GT60M104 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
56 |
GT60M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
57 |
GT60M302 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
58 |
GT60M303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
59 |
GT60M322 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
TOSHIBA |
60 |
GT60M323 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
TOSHIBA |
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