| No. |
Part Name |
Description |
Manufacturer |
| 31 |
ERX2SGW4R3E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 32 |
ERX2SGW4R7E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 33 |
IGW40T120 |
IGBTs & DuoPacks - 40A 1200V TO247 IGBT |
Infineon |
| 34 |
NAND01GW4A0AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 35 |
NAND01GW4A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 36 |
NAND01GW4A0AV1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 37 |
NAND01GW4A0AV6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 38 |
NAND01GW4A0AZA1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 39 |
NAND01GW4A0AZA6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 40 |
NAND01GW4A0AZB1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 41 |
NAND01GW4A0AZB6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 42 |
NAND01GW4A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 43 |
NAND01GW4A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 44 |
NAND01GW4A2AV1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 45 |
NAND01GW4A2AV6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 46 |
NAND01GW4A2AZA1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 47 |
NAND01GW4A2AZA6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 48 |
NAND01GW4A2AZB1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 49 |
NAND01GW4A2AZB6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 50 |
ST19CF68GW40RRMA |
CMOS MCU Based Safeguarded Smartcard With Modular Arithmetic Processor & 8 KBytes EEPROM |
ST Microelectronics |
| 51 |
ST19RF08GW40ROXA |
Smartcard MCU With 8 KBytes EEPROM |
ST Microelectronics |
| 52 |
STGW40H120DF2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed |
ST Microelectronics |
| 53 |
STGW40H120F2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed |
ST Microelectronics |
| 54 |
STGW40H60DLFB |
Trench gate field-stop IGBT, HB series 600 V, 40 A high speed |
ST Microelectronics |
| 55 |
STGW40H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed |
ST Microelectronics |
| 56 |
STGW40H65FB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed |
ST Microelectronics |
| 57 |
STGW40M120DF3 |
Trench gate field-stop IGBT, M series 1200 V, 40 A low loss |
ST Microelectronics |
| 58 |
STGW40N120KD |
40 A, 1200 V short circuit rugged IGBT with Ultrafast diode |
ST Microelectronics |
| 59 |
STGW40NC60KD |
40 A - 600 V - short circuit rugged IGBT |
ST Microelectronics |
| 60 |
STGW40NC60V |
N-CHANNEL 40A - 600V TO-247 POWERMESH IGBT |
ST Microelectronics |
| | | |
