No. |
Part Name |
Description |
Manufacturer |
31 |
2075-3000 |
Delay 3000 +/-60 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
32 |
2075-4000 |
Delay 4000 +/-80 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
33 |
2075-500 |
Delay 500 +/-20 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
34 |
2075-5000 |
Delay 5000 +/-100 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
35 |
2075-6000 |
Delay 6000 +/-120 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
36 |
2075A SERIES |
FIXED HIGH B.W. DELAY LINE TR |
Data Delay Devices Inc |
37 |
24C01SC |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC01SC Instead The 24C01SC is a 1K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific ap |
Microchip |
38 |
24C02SC |
The 24C02SC is a 2K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific applications. The 24C02SC is organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire seria |
Microchip |
39 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
40 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
41 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
42 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
43 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
44 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
45 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
46 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
47 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
48 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
49 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
50 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
51 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
52 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
53 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
54 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
55 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
56 |
2SA1348 |
Switching Applications(with Bias Resistance) |
SANYO |
57 |
2SA1518 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (With Bias Resistance) |
SANYO |
58 |
2SA1519 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
59 |
2SA1520 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
60 |
2SA1522 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
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