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Datasheets for H-G

Datasheets found :: 371
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No. Part Name Description Manufacturer
31 2SC5336-T1 High-gain transistor NEC
32 2SC5338-T1 High-gain transistor NEC
33 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NEC
34 2SC5408-T1 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NEC
35 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NEC
36 2SC5409-T1 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION NEC
37 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NEC
38 2SC5507-T2 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NEC
39 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NEC
40 2SC5508-T2 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NEC
41 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD NEC
42 2SC5606-T1 NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD NEC
43 3SK142 Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification Panasonic
44 3SK202 Field-effect Transistor - Silicon N Channel 4-pole MOS Type - For VHF band high-gain low-noise amplification Panasonic
45 AC127 Germanium N-P-N High-Gain Transistor Mullard
46 AD22284-A Dual-Axis, High-g, MEMS Accelerometers Analog Devices
47 AD22284-A-R2 Dual-Axis, High-g, MEMS Accelerometers Analog Devices
48 AD22285 Dual-Axis, High-g, MEMS Accelerometers Analog Devices
49 AD22285-R2 Dual-Axis, High-g, MEMS Accelerometers Analog Devices
50 AD22286 Dual-Axis, High-g, MEMS Accelerometers Analog Devices
51 AD22286-R2 Dual-Axis, High-g, MEMS Accelerometers Analog Devices
52 ADXL278 Dual-Axis, High-g, MEMS Accelerometers Analog Devices
53 AM4961GH-G1 SINGLE PHASE FULL WAVE DIRECT PWM MOTOR DRIVER Diodes
54 AM4962GH-G1 SINGLE PHASE FULL WAVE DIRECT PWM MOTOR DRIVER Diodes
55 BFG193 RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers Infineon
56 BFG193 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) Siemens
57 BFP181 RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Infineon
58 BFP181 NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) Siemens
59 BFP181R RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Infineon
60 BFP181R NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) Siemens


Datasheets found :: 371
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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