No. |
Part Name |
Description |
Manufacturer |
31 |
2SC5336-T1 |
High-gain transistor |
NEC |
32 |
2SC5338-T1 |
High-gain transistor |
NEC |
33 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
34 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
35 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
36 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
37 |
2SC5507 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
38 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
39 |
2SC5508 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
40 |
2SC5508-T2 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
41 |
2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
42 |
2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
43 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
44 |
3SK202 |
Field-effect Transistor - Silicon N Channel 4-pole MOS Type - For VHF band high-gain low-noise amplification |
Panasonic |
45 |
AC127 |
Germanium N-P-N High-Gain Transistor |
Mullard |
46 |
AD22284-A |
Dual-Axis, High-g, MEMS Accelerometers |
Analog Devices |
47 |
AD22284-A-R2 |
Dual-Axis, High-g, MEMS Accelerometers |
Analog Devices |
48 |
AD22285 |
Dual-Axis, High-g, MEMS Accelerometers |
Analog Devices |
49 |
AD22285-R2 |
Dual-Axis, High-g, MEMS Accelerometers |
Analog Devices |
50 |
AD22286 |
Dual-Axis, High-g, MEMS Accelerometers |
Analog Devices |
51 |
AD22286-R2 |
Dual-Axis, High-g, MEMS Accelerometers |
Analog Devices |
52 |
ADXL278 |
Dual-Axis, High-g, MEMS Accelerometers |
Analog Devices |
53 |
AM4961GH-G1 |
SINGLE PHASE FULL WAVE DIRECT PWM MOTOR DRIVER |
Diodes |
54 |
AM4962GH-G1 |
SINGLE PHASE FULL WAVE DIRECT PWM MOTOR DRIVER |
Diodes |
55 |
BFG193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
56 |
BFG193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
57 |
BFP181 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
58 |
BFP181 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
59 |
BFP181R |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
60 |
BFP181R |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
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