| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AQV227NAZ |
PhotoMOS relay, RF (radio frequency) type [1-channel (form A) type]. Low On resistance. AC/DC type. Output rating: load voltage 200 V, load current 70 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 32 |
AQV234AZ |
PhotoMOS relay, HS (high sensitivity) type [1-channel (form A) type]. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 33 |
AQV254RAZ |
PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - with LED display. Output rating: load voltage 400 V, load current 150 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6/-pin side. |
Matsushita Electric Works(Nais) |
| 34 |
AQV257MAZ |
PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - soft ON/OFF operation. Output rating: load voltage 200 V, load current 250 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 35 |
AQV414AZ |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin |
Matsushita Electric Works(Nais) |
| 36 |
AQV414SZ |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Picked from the 4/5/6-pin side |
Matsushita Electric Works(Nais) |
| 37 |
AQW210HLAZ |
PhotoMOS relay, GU (general use) type, 2-ch (form A) current limit function type. AC/DC type. I/O isolation: 5,000 VAC. Output rating: load voltage 350 V, load current 120 mA. Surface-mount. Tape and reel packing style. Picked from the 4/5 |
Matsushita Electric Works(Nais) |
| 38 |
AQW414AZ |
PhotoMOS relay, GU (general use) type, [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 39 |
BFW92A |
Silicon planar epitaxial NPN transistor intended for use in amplifiers in the 40-860MHz range |
Philips |
| 40 |
BXY29 |
Silicon planar epitaxial varactor diode for use in frequency multiplier circuits in the 4-8GHz range |
Mullard |
| 41 |
BYX30-400 |
Fast Recovery Rectifier Diode with controlled avalanche 400V normal polarity |
Philips |
| 42 |
BYX30-400R |
Fast Recovery Rectifier Diode with controlled avalanche 400V reverse polarity |
Philips |
| 43 |
GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 44 |
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
| 45 |
GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
| 46 |
GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 47 |
GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
| 48 |
GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
| 49 |
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation |
TOSHIBA |
| 50 |
HFBR-7900 |
HFBR-7900 · Evaluation kit for the 4+4 channel pluggable Transceiver @ 2.5GBd |
Agilent (Hewlett-Packard) |
| 51 |
SD1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
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