| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N3882 |
Diffused silicon junction rectifier designed for HF range 6A 300V |
Texas Instruments |
| 32 |
1N3882R |
Diffused silicon junction rectifier designed for HF range 6A 300V, reverse polarity |
Texas Instruments |
| 33 |
1N3883 |
Diffused silicon junction rectifier designed for HF range 6A 400V |
Texas Instruments |
| 34 |
1N3883R |
Diffused silicon junction rectifier designed for HF range 6A 400V, reverse polarity |
Texas Instruments |
| 35 |
1N3889 |
Diffused silicon junction rectifier designed for HF range 12A 50V |
Texas Instruments |
| 36 |
1N3889R |
Diffused silicon junction rectifier designed for HF range 12A 50V, reverse polarity |
Texas Instruments |
| 37 |
1N3890 |
Diffused silicon junction rectifier designed for HF range 12A 100V |
Texas Instruments |
| 38 |
1N3890R |
Diffused silicon junction rectifier designed for HF range 12A 100V, reverse polarity |
Texas Instruments |
| 39 |
1N3891 |
Diffused silicon junction rectifier designed for HF range 12A 200V |
Texas Instruments |
| 40 |
1N3891R |
Diffused silicon junction rectifier designed for HF range 12A 200V, reverse polarity |
Texas Instruments |
| 41 |
1N3892 |
Diffused silicon junction rectifier designed for HF range 12A 300V |
Texas Instruments |
| 42 |
1N3892R |
Diffused silicon junction rectifier designed for HF range 12A 300V, reverse polarity |
Texas Instruments |
| 43 |
1N3893 |
Diffused silicon junction rectifier designed for HF range 12A 400V |
Texas Instruments |
| 44 |
1N3893R |
Diffused silicon junction rectifier designed for HF range 12A 400V, reverse polarity |
Texas Instruments |
| 45 |
1N830 |
Silicon Micro-min. UHF Detector |
Motorola |
| 46 |
1N830A |
Silicon Micro-min. UHF Detector |
Motorola |
| 47 |
1S1820 |
Silicon Schottky Barrier Diode, used for UHF TV Tuner Mixer |
Hitachi Semiconductor |
| 48 |
1S2090 |
Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC |
Hitachi Semiconductor |
| 49 |
1S2187 |
Silicon epitaxial schottky barrier mixer diode, UHF Mixer Application |
TOSHIBA |
| 50 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
| 51 |
1SS16 |
Silicon UHF Detector & Mixer Diode |
NEC |
| 52 |
1SS237 |
UHF Detector & Mixer Diode |
NEC |
| 53 |
1SS237(1) |
UHF Detector & Mixer Diode |
NEC |
| 54 |
1SS242 |
Silicon Epitaxial Schottky Barrier Type Diode for UHF band mixer applications, marking S2 |
TOSHIBA |
| 55 |
1SS268 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 56 |
1SS269 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 57 |
1SS271 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE VHF~UHF MIXER APPLICATION |
TOSHIBA |
| 58 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
| 59 |
1SS312 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 60 |
1SS313 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
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