No. |
Part Name |
Description |
Manufacturer |
31 |
1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
32 |
12 and 20 mm High Power Ceramic Filters |
12 and 20 mm High Power Ceramic Filters up to 100 W Continuous Wave (CW) |
Skyworks Solutions |
33 |
12 and 20 mm High Power Ceramic Filters |
12 and 20 mm High Power Ceramic Filters up to 100 W Continuous Wave (CW) |
Skyworks Solutions |
34 |
12F10 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
35 |
12F100 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
36 |
12F100R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
37 |
12F10R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
38 |
12F120 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
39 |
12F120R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
40 |
12F20 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
41 |
12F20R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
42 |
12F40 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
43 |
12F40R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
44 |
12F60 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
45 |
12F60R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
46 |
12F80 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
47 |
12F80R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
48 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
49 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
50 |
150K100A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
51 |
150K20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
52 |
150K40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
53 |
150K60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
54 |
150K80A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
55 |
150KR100A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
56 |
150KR20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
57 |
150KR40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
58 |
150KR60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
59 |
150KR80A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
60 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
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