| No. |
Part Name |
Description |
Manufacturer |
| 31 |
HN1B01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 32 |
HN1B04F |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 33 |
HN1B04FE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 34 |
HN1B04FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 35 |
HN1B26FS |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 36 |
HN1C01F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 37 |
HN1C01FE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 38 |
HN1C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 39 |
HN1C03F |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications |
TOSHIBA |
| 40 |
HN1C03FU |
Transistor Silicon Npn Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 41 |
HN1C05FE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 42 |
HN1C07F |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 43 |
HN1C26FS |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 44 |
HN1D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 45 |
HN1D01FE |
Switching diode |
TOSHIBA |
| 46 |
HN1D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 47 |
HN1D02F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 48 |
HN1D02FE |
Switching diode |
TOSHIBA |
| 49 |
HN1D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 50 |
HN1D03F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 51 |
HN1D03FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 52 |
HN1D04FU |
Switching diode |
TOSHIBA |
| 53 |
HN1J02FU |
Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 54 |
HN1K02FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 55 |
HN1K03FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 56 |
HN1K04FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 57 |
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications |
TOSHIBA |
| 58 |
HN1K06FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 59 |
HN1L02FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 60 |
HN1L03FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
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