| No. |
Part Name |
Description |
Manufacturer |
| 31 |
ISPLSI1016EA |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 32 |
ISPLSI1016EA-100LJ44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 33 |
ISPLSI1016EA-100LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 34 |
ISPLSI1016EA-125LJ44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 35 |
ISPLSI1016EA-125LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 36 |
ISPLSI1016EA-200LJ44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 37 |
ISPLSI1016EA-200LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 38 |
PB-IRFI1010N |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
| 39 |
SI1012R |
N-Channel 1.8-V (G-S) MOSFET |
Vishay |
| 40 |
SI1012X |
N-Channel 1.8-V (G-S) MOSFET |
Vishay |
| 41 |
SI1012X |
N-Channel 1.8-V (G-S) MOSFET |
Vishay |
| 42 |
SI1013R |
P-Channel 1.8-V (G-S) MOSFET |
Vishay |
| 43 |
SI1013X |
P-Channel 1.8-V (G-S) MOSFET |
Vishay |
| 44 |
SI1016X |
Complementary N- and P-Channel 1.8-V (G-S) MOSFET |
Vishay |
| 45 |
SKI10123 |
Silicon N-Channel MOSFET |
Sanken |
| 46 |
SKI10195 |
Silicon N-Channel MOSFET |
Sanken |
| 47 |
STEVAL-MKI101V1 |
MEMS demonstration board based on LPY450AL (dual-axis pitch and yaw ±500 dps analog gyroscope) |
ST Microelectronics |
| | | |
