No. |
Part Name |
Description |
Manufacturer |
31 |
IRLI3215PBF |
150V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220FullPAK package |
International Rectifier |
32 |
ISPLSI3256-50LG |
High Density Programmable Logic |
Lattice Semiconductor |
33 |
ISPLSI3256-50LM |
High Density Programmable Logic |
Lattice Semiconductor |
34 |
ISPLSI3256-70LG |
High Density Programmable Logic |
Lattice Semiconductor |
35 |
ISPLSI3256-70LM |
High Density Programmable Logic |
Lattice Semiconductor |
36 |
ISPLSI3256A-50LM |
In-System Programmable High Density PLD |
Lattice Semiconductor |
37 |
ISPLSI3256A-50LMI |
In-System Programmable High Density PLD |
Lattice Semiconductor |
38 |
ISPLSI3256A-70LM |
In-System Programmable High Density PLD |
Lattice Semiconductor |
39 |
ISPLSI3256A-70LQ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
40 |
ISPLSI3256A-70LQI |
In-System Programmable High Density PLD |
Lattice Semiconductor |
41 |
ISPLSI3256A-90LM |
In-System Programmable High Density PLD |
Lattice Semiconductor |
42 |
ISPLSI3256A-90LQ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
43 |
ISPLSI3256E-100LB320 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
44 |
ISPLSI3256E-100LQ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
45 |
ISPLSI3256E-70LB320 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
46 |
ISPLSI3256E-70LQ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
47 |
K7I321882M |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM |
Samsung Electronic |
48 |
K7I323682M |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM |
Samsung Electronic |
49 |
K7I323682M K7I321882M K7I320882M |
1Mx36 & 2Mx18 & 4Mx8 DDRII CIO b2 SRAM Data Sheet |
Samsung Electronic |
50 |
K7I323682M K7I321882M K7I320882M |
1Mx36 & 2Mx18 & 4Mx8 DDRII CIO b2 SRAM Data Sheet |
Samsung Electronic |
51 |
K7I323682M K7I321882M K7I320882M |
1Mx36 & 2Mx18 & 4Mx8 DDRII CIO b2 SRAM Data Sheet |
Samsung Electronic |
52 |
K7I323682M K7I321882M K7I320882M |
1Mx36 & 2Mx18 & 4Mx8 DDRII CIO b2 SRAM Data Sheet |
Samsung Electronic |
53 |
K7I323682M K7I321882M K7I320882M |
1Mx36 & 2Mx18 & 4Mx8 DDRII CIO b2 SRAM Data Sheet |
Samsung Electronic |
54 |
K7I323682M K7I321882M K7I320882M |
1Mx36 & 2Mx18 & 4Mx8 DDRII CIO b2 SRAM Data Sheet |
Samsung Electronic |
55 |
K7I323684M, K7I321884M, K7I320884M |
1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDRII CIO b4 SRAM Data Sheet |
Samsung Electronic |
56 |
K7I323684M, K7I321884M, K7I320884M |
1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDRII CIO b4 SRAM Data Sheet |
Samsung Electronic |
57 |
K7I323684M, K7I321884M, K7I320884M |
1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDRII CIO b4 SRAM Data Sheet |
Samsung Electronic |
58 |
MI32T |
INFRARED EMITTING DIODE |
Micro Electronics |
59 |
MI32T-L |
INFRARED EMITTING DIODE |
Micro Electronics |
60 |
MI32TA |
INFRARED EMITTING DIODE |
Micro Electronics |
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