No. |
Part Name |
Description |
Manufacturer |
31 |
ISPLSI5256VA-125LQ208 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
32 |
ISPLSI5256VA-70LB208 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
33 |
ISPLSI5256VA-70LB272 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
34 |
ISPLSI5256VA-70LB272I |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
35 |
ISPLSI5256VA-70LQ208 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
36 |
ISPLSI5256VE-100LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
37 |
ISPLSI5256VE-100LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
38 |
ISPLSI5256VE-100LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
39 |
ISPLSI5256VE-100LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
40 |
ISPLSI5256VE-100LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
41 |
ISPLSI5256VE-100LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
42 |
ISPLSI5256VE-100LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
43 |
ISPLSI5256VE-100LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
44 |
ISPLSI5256VE-125LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
45 |
ISPLSI5256VE-125LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
46 |
ISPLSI5256VE-125LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
47 |
ISPLSI5256VE-125LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
48 |
ISPLSI5256VE-125LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
49 |
ISPLSI5256VE-125LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
50 |
ISPLSI5256VE-125LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
51 |
ISPLSI5256VE-125LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
52 |
ISPLSI5256VE-165LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
53 |
ISPLSI5256VE-165LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
54 |
ISPLSI5256VE-165LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
55 |
ISPLSI5256VE-165LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns. |
Lattice Semiconductor |
56 |
ISPLSI5256VE-80LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
57 |
ISPLSI5256VE-80LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
58 |
ISPLSI5256VE-80LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
59 |
ISPLSI5256VE-80LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
60 |
PB-IRFI520N |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
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