No. |
Part Name |
Description |
Manufacturer |
31 |
1SS383 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
32 |
1SS384 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
33 |
1SS385 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
34 |
1SS385F |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
35 |
1SS388 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
36 |
1SS389 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
37 |
1SS391 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
38 |
1SS392 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
39 |
1SS393 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
40 |
1SS394 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
41 |
1SS395 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
42 |
1SS396 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
43 |
1SS401 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
44 |
1SS402 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
45 |
1SS403 |
Diode Silicon Epitaxial Schottoky Barrier Type High Voltage Switching Applications |
TOSHIBA |
46 |
1SS404 |
Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications |
TOSHIBA |
47 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
48 |
2N2710 |
NPN silicon transistor for industrial service |
Motorola |
49 |
2N2904 |
Silicon PNP Planar Epitaxial Switching Transistor |
IPRS Baneasa |
50 |
2N2905 |
Silicon PNP Planar Epitaxial Switching Transistor |
IPRS Baneasa |
51 |
2N2951 |
SEPT® NPN planar epitaxial silicon power transistor for amplifiers |
Sprague |
52 |
2N2952 |
SEPT® NPN planar epitaxial silicon power transistor for amplifiers |
Sprague |
53 |
2N3009 |
NPN silicon epitaxial switching transistor |
Motorola |
54 |
2N3013 |
NPN silicon epitaxial switching transistor |
Motorola |
55 |
2N3014 |
NPN silicon epitaxial switching transistor |
Motorola |
56 |
2N3055C |
Single diffused hometaxial silicon NPN power transistor |
SGS-ATES |
57 |
2N3055H |
Single diffused hometaxial silicon NPN power transistor |
SGS-ATES |
58 |
2N3210 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
59 |
2N3211 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
60 |
2N3702 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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