| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BUX80/6 |
Silicon NPN Multiepitaxial MESA Power Transistor |
IPRS Baneasa |
| 32 |
BUX80/7 |
Silicon NPN Multiepitaxial MESA Power Transistor |
IPRS Baneasa |
| 33 |
BUX81 |
Silicon NPN Multiepitaxial MESA Power Transistor |
IPRS Baneasa |
| 34 |
BUX81/9 |
Silicon NPN Multiepitaxial MESA Power Transistor |
IPRS Baneasa |
| 35 |
BUX82 |
Silicon NPN Multiepitaxial MESA Power Transistor |
IPRS Baneasa |
| 36 |
BUX82/4 |
Silicon NPN Multiepitaxial MESA Power Transistor |
IPRS Baneasa |
| 37 |
BUX82/5 |
Silicon NPN Multiepitaxial MESA Power Transistor |
IPRS Baneasa |
| 38 |
BUX82/6 |
Silicon NPN Multiepitaxial MESA Power Transistor |
IPRS Baneasa |
| 39 |
BUX82/7 |
Silicon NPN Multiepitaxial MESA Power Transistor |
IPRS Baneasa |
| 40 |
BUX83 |
Silicon NPN Multiepitaxial MESA Power Transistor |
IPRS Baneasa |
| 41 |
BUX83/9 |
Silicon NPN Multiepitaxial MESA Power Transistor |
IPRS Baneasa |
| 42 |
BUX97 |
Silicon multiepitaxial biplanar® NPN transistor |
SGS-ATES |
| 43 |
BUX97A |
Silicon multiepitaxial biplanar® NPN transistor |
SGS-ATES |
| 44 |
BUX97B |
Silicon multiepitaxial biplanar® NPN transistor |
SGS-ATES |
| 45 |
BUY12 |
NPN silicon, multiepitaxial, mesa transistor |
Mikroelektronikai Vallalat |
| 46 |
SGSD310 |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
| 47 |
SGSD311 |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
| 48 |
SGSD311FI |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
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