Datasheets for IGBT H

Datasheets found :: 234

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No.	Part Name	Description	Manufacturer
31	GT25Q102	Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications	TOSHIBA
32	GT25Q301	Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications	TOSHIBA
33	GT30J101	Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications	TOSHIBA
34	GT30J121	Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications	TOSHIBA
35	GT30J301	Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications	TOSHIBA
36	GT30J311	Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications	TOSHIBA
37	GT30J324	Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications	TOSHIBA
38	GT40M101	INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS	TOSHIBA
39	GT50J102	INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS	TOSHIBA
40	GT50J121	Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications	TOSHIBA
41	GT50J301	INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS	TOSHIBA
42	GT50J325	Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications	TOSHIBA
43	GT60M104	Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS	TOSHIBA
44	GT60M302	INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS	TOSHIBA
45	GT60M303	INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS	TOSHIBA
46	GT60N321	Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation	TOSHIBA
47	GT80J101A	Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications	TOSHIBA
48	IR2308	High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package	International Rectifier
49	IR2308S	High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC package	International Rectifier
50	IRG5K100HF06A	600V 100A Fast IGBT Half-Bridge module packaged in POWIR 34 package	International Rectifier
51	IRG5K100HF12A	1200V 100A Fast IGBT Half-Bridge module packaged in POWIR 34 package	International Rectifier
52	IRG5K100HF12B	1200V 100A Fast IGBT Half-Bridge module packaged in POWIR 62 package	International Rectifier
53	IRG5K100HH06E	600V 100A Fast IGBT H-Bridge module packaged in POWIR ECO 2 package	International Rectifier
54	IRG5K150HF06A	600V 150A Fast IGBT Half-Bridge module packaged in POWIR 34 package	International Rectifier
55	IRG5K150HF12B	1200V 150A Fast IGBT Half-Bridge module packaged in POWIR 62 package	International Rectifier
56	IRG5K200HF06A	600V 200A Fast IGBT Half-Bridge module packaged in POWIR 34 package	International Rectifier
57	IRG5K200HF06B	600V 200A Fast IGBT Half-Bridge module packaged in POWIR 62 package	International Rectifier
58	IRG5K200HF12B	1200V 200A Fast IGBT Half-Bridge module packaged in POWIR 62 package	International Rectifier
59	IRG5K300HF06B	600V 300A Fast IGBT Half-Bridge module packaged in POWIR 62 package	International Rectifier
60	IRG5K35HF12A	1200V 35A Fast IGBT Half-Bridge module packaged in POWIR 34 package	International Rectifier

Datasheets found :: 234

Page: | 1 | 2 | 3 | 4 | 5 | 6 |