No. |
Part Name |
Description |
Manufacturer |
31 |
2N5162 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
32 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
33 |
2N5470 |
The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note |
RCA Solid State |
34 |
2N5596 |
Application Note - Match impedances in microwave amplifiers |
Motorola |
35 |
2N6032 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
36 |
2N6033 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
37 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
38 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
39 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
40 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
41 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
42 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
43 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
44 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
45 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
46 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
47 |
2N6054 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
48 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
49 |
2N6056 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
50 |
2N6057 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
51 |
2N6058 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
52 |
2N6059 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
53 |
2N6386 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
54 |
2N6387 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
55 |
2N6388 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
56 |
2N665 |
PNP germanium power transistor in military and industrial equipment |
Motorola |
57 |
2SA1050 |
Trans GP BJT PNP 30V 0.1A 3-Pin MPAK |
New Jersey Semiconductor |
58 |
2SA1051 |
Trans GP BJT PNP 30V 0.1A 3-Pin MPAK |
New Jersey Semiconductor |
59 |
2SA1214 |
Trans GP BJT PNP 160V 15A 3-Pin MT-200 |
New Jersey Semiconductor |
60 |
2SA1217 |
Trans GP BJT PNP 160V 15A 3-Pin MT-200 |
New Jersey Semiconductor |
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