| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1SS404 |
Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications |
TOSHIBA |
| 32 |
1SV102 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 33 |
1SV103 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 34 |
1SV147 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 35 |
1SV149 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 36 |
1SV225 |
Variable Capacitance Diode Electronic Tuning Applications of FM Receivers |
TOSHIBA |
| 37 |
1SV228 |
Variable Capacitance Diode Electronic Tuning Applications of FM Receivers |
TOSHIBA |
| 38 |
1SV283B |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 39 |
2N1008 |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 40 |
2N1008A |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 41 |
2N1008B |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 42 |
2N1038 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 43 |
2N1039 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 44 |
2N1040 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 45 |
2N1041 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 46 |
2N1073 |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V |
Motorola |
| 47 |
2N1073A |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V |
Motorola |
| 48 |
2N1073B |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V |
Motorola |
| 49 |
2N1131 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 50 |
2N1185 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 51 |
2N1186 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 52 |
2N1187 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 53 |
2N1188 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 54 |
2N1189 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 55 |
2N1190 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 56 |
2N1191 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 57 |
2N1192 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 58 |
2N1193 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 59 |
2N1194 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 60 |
2N1613 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
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