No. |
Part Name |
Description |
Manufacturer |
31 |
74LV1T87GX |
2-input single supply translating EXCLUSIVE-NOR gate |
Nexperia |
32 |
AB-138 |
USING EXTERNAL INTEGRATION CAPACITORS ON THE DDC112 |
Burr Brown |
33 |
AD890JP |
V(cc): +-7.5V; precision, wideband channel processing element. For high performance disk subsystem use |
Analog Devices |
34 |
AD890JQ |
V(cc): +-7.5V; precision, wideband channel processing element. For high performance disk subsystem use |
Analog Devices |
35 |
ADP8866 |
Charge Pump Driven 9-Channel LED Driver with Automated LED Lighting Effects |
Analog Devices |
36 |
AN005 |
Application Note - a 100KHz 50W Switching Regulator (Single-Ended Forward Type) Using the Bipolar Ring Emitter Transistor |
Fujitsu Microelectronics |
37 |
AN1227 |
IMPROVED RF MOSFET RELIABILITY THROUGH PACKAGING ENHANCEMENTS |
SGS Thomson Microelectronics |
38 |
AN191 |
Using eCOS on the EP72XX Development Boards |
Cirrus Logic |
39 |
AN36 |
CS5516 and CS5520: Overcoming Errors in Bridge Transducer Measurement |
Cirrus Logic |
40 |
AN583 |
PROTECTION STANDARDS APPLICABLE TO SWITCHING EQUIPMENT |
SGS Thomson Microelectronics |
41 |
AN939 |
Designing Energy Meters with the PIC16F873A |
Microchip |
42 |
APP NOTE |
Application Note - Techniques for Obtaining Optimum Performance from Ring Emitter Transistors |
Fujitsu Microelectronics |
43 |
APP NOTE |
Application Note - a 50KHz 200W Half-Bridge Switching Power Supply Using Ring Emitter Transistors |
Fujitsu Microelectronics |
44 |
AS80M2180-08SR |
3.3 V, peak reducing EMI solution |
Alliance Semiconductor |
45 |
AS80M2180-08ST |
3.3 V, peak reducing EMI solution |
Alliance Semiconductor |
46 |
AS80M2180-08TR |
3.3 V, peak reducing EMI solution |
Alliance Semiconductor |
47 |
AS80M2180-08TT |
3.3 V, peak reducing EMI solution |
Alliance Semiconductor |
48 |
AT84CS001 |
Selectable 10-bit 1:4 or 1:2 ratio 2.2 Gsps DMUX in EBGA package. A monolithic high-speed demultiplexer providing easy interfacing ... |
Atmel |
49 |
BAS28 |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
Siemens |
50 |
BAW100 |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
Siemens |
51 |
BCW65A |
Silicon NPN Transistor, marking EA |
Motorola |
52 |
BCW65A |
NPN Transistor, marking EA |
Siemens |
53 |
BCW65B |
NPN Transistor, marking EB |
Siemens |
54 |
BCW65C |
NPN Transistor, marking EC |
Siemens |
55 |
BCW66F |
Silicon NPN Transistor, marking EF, SOT-23 case |
Motorola |
56 |
BCW66F |
NPN Transistor, marking EF |
Siemens |
57 |
BCW66G |
NPN Transistor, marking EG |
Siemens |
58 |
BCW66H |
NPN Transistor, marking EH |
Siemens |
59 |
BCW67C |
Silicon PNP Transistor, marking EC, SOT-23 case |
Motorola |
60 |
BH011 |
FOUR ZONE HOOK UP, USING EB- ZS-4 |
etc |
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