No. |
Part Name |
Description |
Manufacturer |
31 |
C30641G-DTC |
Large-area InGaAs photodiode. TE-cooler option, 2-stage TE cooler. |
PerkinElmer Optoelectronics |
32 |
C30641G-TC |
Large-area InGaAs photodiode. TE-cooler option, 1-stage TE cooler. |
PerkinElmer Optoelectronics |
33 |
C30642 |
Large-Area InGaAs Photodiodes |
PerkinElmer Optoelectronics |
34 |
C30642G |
Large-area InGaAs photodiode. TO-5 with glass window. |
PerkinElmer Optoelectronics |
35 |
C30642G-DTC |
Large-area InGaAs photodiode. TE-cooler option, 2-stage TE cooler. |
PerkinElmer Optoelectronics |
36 |
C30642G-TC |
Large-area InGaAs photodiode. TE-cooler option, 1-stage TE cooler. |
PerkinElmer Optoelectronics |
37 |
C30665 |
Large-Area InGaAs Photodiodes |
PerkinElmer Optoelectronics |
38 |
C30665G |
Large-area InGaAs photodiode. TO-5 with glass window. |
PerkinElmer Optoelectronics |
39 |
C30665G-DTC |
Large-area InGaAs photodiode. TE-cooler option, 2-stage TE cooler. |
PerkinElmer Optoelectronics |
40 |
C30665G-TC |
Large-area InGaAs photodiode. TE-cooler option, 1-stage TE cooler. |
PerkinElmer Optoelectronics |
41 |
C8060 |
InGaAs multichannel detector head |
Hamamatsu Corporation |
42 |
C8060-01 |
Supply voltage: 0.5-7V; InGaAs multichannel detector head. Desined for InGaAs linear image sensor |
Hamamatsu Corporation |
43 |
C8060-01 |
Supply voltage: 0.5-7V; InGaAs multichannel detector head. Desined for InGaAs linear image sensor |
Hamamatsu Corporation |
44 |
C8061 |
InGaAs multichannel detector head |
Hamamatsu Corporation |
45 |
C8061-01 |
Supply voltage: 0.5-7V; InGaAs multichannel detector head. Desined for InGaAs linear image sensor |
Hamamatsu Corporation |
46 |
C8061-01 |
Supply voltage: 0.5-7V; InGaAs multichannel detector head. Desined for InGaAs linear image sensor |
Hamamatsu Corporation |
47 |
C8062-01 |
InGaAs multichannel detector head |
Hamamatsu Corporation |
48 |
CFY77 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
49 |
CFY77-08 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
50 |
CFY77-10 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
51 |
FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode |
Fujitsu Microelectronics |
52 |
FU-311SPP-CV3 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
53 |
FU-311SPP-CV4 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
54 |
FU-318AP-M6 |
InGaAs APD MODULE FOR LONG WAVELENGTH BAND |
Mitsubishi Electric Corporation |
55 |
FU-318SAP-M6 |
InGaAs APD MODULE FOR LONG WAVELENGTH BAND |
Mitsubishi Electric Corporation |
56 |
FU-319SPA-6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
57 |
FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
58 |
FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
59 |
FU-319SPA-V6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
60 |
FU-319SPA-W6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
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