| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 32 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 33 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 34 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 35 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 36 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 37 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 38 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 39 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 40 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 41 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 42 |
1S85 |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 43 |
1S85H |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 44 |
2N5265 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 45 |
2N5266 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 46 |
2N5267 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 47 |
2N5268 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 48 |
2N5269 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 49 |
2N5270 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 50 |
2SA1801 |
TRANSISTOR SLICON PNP EPITAXIAL TYPE VIDEO OUTPUT STAGE IN HIGH RESOLUTION DISPLAY |
TOSHIBA |
| 51 |
2SC2271 |
CHROMA OUTPUT, HORIZONTAL DEFLECTION DRIVER APPLICATIONS |
SANYO |
| 52 |
2SC3613 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE VIDEO DRIVE STAGE IN HIGH RESOLUTION DISPLAY HIGH SPEED SWITCHING APPLICATIONS |
TOSHIBA |
| 53 |
2SC3636 |
Very High-Definition Display Horizontal Deflection Output Applications |
SANYO |
| 54 |
2SC3637 |
Very High-Definition Display Horizontal Deflection Output Applications |
SANYO |
| 55 |
2SC3638 |
Very High-Definition Display Horizontal Deflection Output Applications |
SANYO |
| 56 |
2SC3642 |
Ultrahigh-Definition Display Horizontal Deflection Output Applications |
SANYO |
| 57 |
2SC3643 |
Very High-Definition Display Horizontal Deflection Output Applications |
SANYO |
| 58 |
2SC3644 |
Ultrahigh-Definition Display Horizontal Deflection Output Applications |
SANYO |
| 59 |
2SC3894 |
Ultrahigh-Definition Display Horizontal Deflection Output Applications |
SANYO |
| 60 |
2SC3895 |
Ultrahigh-Definition Display Horizontal Deflection Output Applications |
SANYO |
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